VERY LOW-THRESHOLD DOUBLE-HETEROJUNCTION AL_XGA_1-X AS INJECTION LASERS.ETTENBERG M.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 12; PP. 652-654; BIBL. 9 REF.Article

A NEW DIELECTRIC FACET REFLECTOR FOR SEMICONDUCTOR LASERS.ETTENBERG M.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 11; PP. 724-725; BIBL. 9 REF.Article

Applications spur diode-laser developmentsETTENBERG, M.Laser focus world. 1991, Vol 27, Num 5, pp 137-150, issn 1043-8092, 8 p.Article

Developments to watch in diode lasersETTENBERG, M.Laser focus (1983). 1985, Vol 21, Num 5, pp 86-98, issn 0740-2511Article

BEAMWIDTH APPROXIMATIONS FOR THE FUNDAMENTAL MODE IN SYMMETRIC DOUBLE-HETEROJUNCTION LASERSBOTEZ D; ETTENBERG M.1978; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1978; VOL. 14; NO 11; PP. 827-830; BIBL. 19 REF.Article

THE RECOMBINATION PROPERTIES OF LATTICE-MISMATCHED IN_XGA_1-XP/GAAS HETEROJONCTIONS.ETTENBERG M; OLSEN GH.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 10; PP. 4275-4280; BIBL. 25 REF.Article

CALCULATED STRESSES IN MULTILAYERED HETEROEPITAXIAL STRUCTURES.OLSEN GH; ETTENBERG M.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 6; PP. 2543-2547; BIBL. 25 REF.Article

COMPARISON OF ZN-DOPED GAAS LAYERS PREPARED BY LIQUID-PHASE AND VAPOR-PHASE TECHNIQUES, INCLUDING DIFFUSION LENGTHS AND PHOTOLUMINESCENCE.ETTENBERG M; NUESE CJ.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 8; PP. 3500-3508; BIBL. 45 REF.Article

INTERFACIAL RECOMBINATION AT (ALGA)AS/GAAS HETEROJUNCTION STRUCTURES.ETTENBERG M; KRESSEL H.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 4; PP. 1538-1544; BIBL. 15 REF.Article

LOW-THRESHOLD DOUBLE HETEROJUNCTION ALGAAS/GAAS LASER DIODES: THEORY AND EXPERIMENT.KRESSEL H; ETTENBERG M.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 8; PP. 3533-3537; BIBL. 15 REF.Article

HETEROJUNCTION DIODES OF (ALGA) AS-GAAS WITH IMPROVED DEGRADATION RESISTANCE.ETTENBERG M; KRESSEL H.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 8; PP. 478-480; BIBL. 11 REF.Article

ELECTRON TRANSPORT AND EMISSION CHARACTERISTICS OF NEGATIVE ELECTRON AFFINITY AL_XGA_1-XAS ALLOYS (0 <OU= X <OU= 0.3).MARTINELLI RU; ETTENBERG M.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 9; PP. 3896-3898; BIBL. 24 REF.Article

EFFECT OF SUBSTRATE PREPARATION ON THE SMOOTHNESS OF LIQUID PHASE EPITAXIAL (ALGA)AS ON GAP.ETTENBERG M; MCFARLANE SH III.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 23; NO 3; PP. 233-236; BIBL. 11 REF.Article

RADIATION TRAPPING IN LASER DIODESETTENBERG M; LOCKWOOD HF; SOMMERS HS JR et al.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 12; PP. 5047-5051; BIBL. 9 REF.Serial Issue

HIGH-POWER SINGLE-MODE ALGAAS LASER DIODESBOTEZ D; CHANNIN DJ; ETTENBERG M et al.1982; OPT. ENG.; ISSN 0091-3286; USA; DA. 1982; VOL. 21; NO 6; PP. 1066-1073; BIBL. 32 REF.Article

INTERFACIAL RECOMBINATION VELOCITY DETERMINATION IN IN_0.5GA_0.5 P/GAAS.ETTENBERG M; NUESE CJ; OLSEN GH et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 3; PP. 1288-1292; BIBL. 17 REF.Article

THE EFFECT OF GAS-PHASE STOICHIOMETRY ON DEEP LEVELS IN VAPOR-GROWN GAAS.MILLER MD; OLSEN GH; ETTENBERG M et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 8; PP. 538-540; BIBL. 13 REF.Article

ROOM-TEMPERATURE HETEROJUNCTION LASER DIODES FROM VAPOR-GROWN IN_1-XGA_XP/GAAS STRUCTURES.NUESE CJ; ETTENBERG M; OLSEN GH et al.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 10; PP. 612-614; BIBL. 22 REF.Article

SELF-SUSTAINED OSCILLATIONS IN (ALGA)AS OXIDE-DEFINED STRIPE LASERSCHANNIN DJ; ETTENBERG M; KRESSEL H et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 11 PART. 1; PP. 6700-6706; BIBL. 16 REF.Article

OPTICAL FEEDBACK EFFECTS IN CW INJECTION LASERSBURKE WJ; ETTENBERG M; KRESSEL H et al.1978; APPL. OPT.; USA; DA. 1978; VOL. 17; NO 14; PP. 2233-2238; BIBL. 8 REF.Article

HIGH RADIANCE LED FOR SINGLE-FIBER OPTICAL LINKS.WITTKE JP; ETTENBERG M; KRESSEL H et al.1976; R.C.A. REV.; U.S.A.; DA. 1976; VOL. 37; NO 2; PP. 159-183; BIBL. 30 REF.Article

LED FOR HIGH DATA RATE, OPTICAL COMMUNICATIONS. = DIODES ELECTROLUMINESCENTES POUR COMMUNICATIONS OPTIQUES AVEC UN HAUT TAUX DE DONNEESLOCKWOOD HF; WITTKE JP; ETTENBERG M et al.1976; OPT. COMMUNIC.; NETHERL.; DA. 1976; VOL. 16; NO 1; PP. 193-196; BIBL. 12 REF.Article

VAPOR-GROWN CW ROOM-TEMPERATURE GAAS/INYGA_1-Y P LASERS.NUESE CJ; OLSEN GH; ETTENBERG M et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 1; PP. 54-56; BIBL. 12 REF.Article

ROOM-TEMPERATURE LASER OPERATION OF IN_XGA_1-XAS P-N JUNCTIONS.NUESE CJ; ENSTROM RE; ETTENBERG M et al.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 2; PP. 83-85; BIBL. 10 REF.Article

LONG-TERM LIFE TESTS OF C.W. (ALGA)AS LASER DIODES AT ROOM TEMPERATUREETTENBERG M; KRESSEL H; LADANY I et al.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 25; PP. 815-816; BIBL. 7 REF.Article